The Carbon Nanotube Field Effect Transistors Performances; Advantages and Challenges

چکیده مقاله

 In this paper after describing the Structure of two significant methods of Carbon Nanotube (Single-walled nanotubes and multi-walled nanotube) and The field effect transistors consisting of Carbon Nanotube that called CNTFET, we show the I–V characteristics of carbon nanotubes and Electronic structure that have different work functions of the metal and the CNT result in a Schottky barrier at the source and drain, which are made of metals like silver, titanium, palladium and aluminum. The review of Advantages of using carbon nanotube that shows different characteristics compared to MOSFETs in their performances such as a: Effect of short channel length, High carrier mobility over long channel length, Transconductance variability due to gate capacitance and bias voltage, Ballistic conduction and increased charge density and either the Disadvantages of using carbon nanotube in their performances such as a: Lifetime and degradation that carbon nanotubes are degrading too quickly in ambient air, High electric field Reliability and Problems in mass production based on accurate equation and analysis are discussed.

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