Deceleration of particles in Graphene transistors with impurity states of electrons

چکیده مقاله

Differential cross-section of inelastic scattering and loss function of fast charged particles in a two- dimensional electron gas are calculated at low temperatures, taking into account the localization of electrons at impurity atoms. Hie contribution of one-particle and collective excitations of the electron gas to the scattering cross-section and loss function is considered. One- particle excitations are manifested in the existence of a threshold of scattering cross-section and loss function, associated with a transition of localized electrons to the conduction band. Localization of electrons leads to a decrease in the frequency of two-dimensional plasmons. Consequently, the plasma loss lines in the energy spectrum of electrons passing through a two- dimensional electron gas are displaced towards lower frequencies and are broadened. Numerical estimates are obtained for Graphene transistors at the boundary between silicon and silicon dioxide

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