Investigation of the effect of annealing on the physical properties of the CdS / CdTe layer grown by magnetic sputtering on the FTO substrate

چکیده مقاله

In this study, the Cadmium Sulfide (CdS) and Cadmium Telluride (CdTe) semiconductor on the FTO (Flourine Tin Oxide) substrate by RF Magnetron Sputtering with parameters such as Initial acuum 10^-6 Torr, Working Pressure 10^-2, Time, RF Power, and Target distance to substrate. And Then, after the completion of the Deposition , Annealing with CVD ( Chemical Vapor Deposition) in the Atmosphere Ar-N_2, N_2, Ar-O₂ for 30 minutes at 400 c° Growth sample of CdS/CdTe were performed. And using analysis XRD (X-ray Diffraction) – AFM (Atomic Force Microscopy) – SPM (Spectrophotometer) – 4 Point Probe –FE-SEM (Scanning Electron Microscopy) physical properties of growth samples including: crystal structure, surface morphology, Film roughness, optical properties and surface resitance Reviewed. The results for physical properties samples before and after annealing was compared. For this purpose to do this research and prevent any pollution At the surface of the substrate , First cut the substrate in the desired dimensions Then for 15 minutes At aston Atmosphere , and then altrasonic ethanol for 20 minutes. And finally with gas flow Nitrogen cooled. And then the substrate is located inside the magnetron sputtering and initially the CdS semiconductor the substrate FTO deposition then the CdTe semiconductor material on the CdS/FTO deposition. the results of the experiment showed that the crystalline structure of the samples before and after annealing in line (111) Cubic and (002) Hexagonal. And also roughness of samples showed that the most roughness before deposition. And the reflection and transition spectra were for samples it is after annealing. The results of the FE-SEM showed that the samples of the deposition were before and after the annealing large grain crystalline.

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